LG Electronics Inc. LG265N9K-G4
Mono-c-Si
265.221
W Pmax
35.5
V Voc
9.6
A Isc
29.7
V Vmp
8.93
A Imp
18.53
% eff.
0.7782
FF
54
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 265.221 | W |
| PTC Power | PTC | 246.4 | W |
| Open-circuit voltage | V_oc_ref | 35.5 | V |
| Short-circuit current | I_sc_ref | 9.6 | A |
| Max-power voltage | V_mp_ref | 29.7 | V |
| Max-power current | I_mp_ref | 8.93 | A |
| Fill factor | FF | 0.7782 | — |
| Efficiency (STC) | η | 18.53 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.00288 | A/°C |
| Voc temperature coefficient | beta_oc | -0.0994 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.38 | %/°C |
| NOCT | T_NOCT | 43.6 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.36608 | V |
| Light-generated current (ref) | I_L_ref | 9.61416 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.1762 | Ω |
| Shunt resistance (ref) | R_sh_ref | 119.418 | Ω |
| Cells in series | N_s | 54 | — |
| CEC Adjust factor | Adjust | 10.7203 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
54
Module area
1.431 m²
Dimensions
1.46 × 0.98 m
NOCT
43.6 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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