LG Electronics Inc. LG385N2C-G4

Mono-c-Si

385.361 W Pmax

48.9 V Voc

10.16 A Isc

40.1 V Vmp

9.61 A Imp

20.27 % eff.

0.7756 FF

72 cells

IV curves not yet precomputed for this module. Run python manage.py precompute_iv_curves to generate them.

CEC Single-Diode Model Parameters

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	385.361	W
PTC Power	PTC	356.4	W
Open-circuit voltage	V_oc_ref	48.9	V
Short-circuit current	I_sc_ref	10.16	A
Max-power voltage	V_mp_ref	40.1	V
Max-power current	I_mp_ref	9.61	A
Fill factor	FF	0.7756	—
Efficiency (STC)	η	20.27	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.003048	A/°C
Voc temperature coefficient	beta_oc	-0.13692	V/°C
Pmax temperature coefficient	gamma_r	-0.37	%/°C
NOCT	T_NOCT	45.9	°C
CEC Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.8244	V
Light-generated current (ref)	I_L_ref	10.1667	A
Saturation current (ref)	I_o_ref	—	A
Series resistance	R_s	0.33461	Ω
Shunt resistance (ref)	R_sh_ref	510.179	Ω
Cells in series	N_s	72	—
CEC Adjust factor	Adjust	3.7742	%

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Module Specifications

Technology Mono-c-Si

Bifacial No

BIPV No

Cells in series 72

Module area 1.901 m²

Dimensions 1.94 × 0.98 m

NOCT 45.9 °C

CEC listing date 11/16/2022

Annual degradation 0.33%/yr

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