Anhui Rinengzhongtian Semiconductor Development QJM245-60

Mono-c-Si

245.014 W Pmax

37.02 V Voc

8.71 A Isc

30.1 V Vmp

8.14 A Imp

15.06 % eff.

0.7599 FF

60 cells

IV curves not yet precomputed for this module. Run python manage.py precompute_iv_curves to generate them.

CEC Single-Diode Model Parameters

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	245.014	W
PTC Power	PTC	220.6	W
Open-circuit voltage	V_oc_ref	37.02	V
Short-circuit current	I_sc_ref	8.71	A
Max-power voltage	V_mp_ref	30.1	V
Max-power current	I_mp_ref	8.14	A
Fill factor	FF	0.7599	—
Efficiency (STC)	η	15.06	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.002898	A/°C
Voc temperature coefficient	beta_oc	-0.12107	V/°C
Pmax temperature coefficient	gamma_r	-0.4682	%/°C
NOCT	T_NOCT	45.2	°C
CEC Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.55252	V
Light-generated current (ref)	I_L_ref	8.72013	A
Saturation current (ref)	I_o_ref	—	A
Series resistance	R_s	0.28765	Ω
Shunt resistance (ref)	R_sh_ref	247.388	Ω
Cells in series	N_s	60	—
CEC Adjust factor	Adjust	12.5404	%

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Module Specifications

Technology Mono-c-Si

Bifacial No

BIPV No

Cells in series 60

Module area 1.627 m²

Dimensions 1.64 × 0.992 m

NOCT 45.2 °C

CEC listing date 11/16/2022