Anhui Rinengzhongtian Semiconductor Development QJM180-72

Mono-c-Si

180.139 W Pmax

43.3 V Voc

5.59 A Isc

36.1 V Vmp

4.99 A Imp

14.11 % eff.

0.7442 FF

72 cells

IV curves not yet precomputed for this module. Run python manage.py precompute_iv_curves to generate them.

CEC Single-Diode Model Parameters

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	180.139	W
PTC Power	PTC	159.6	W
Open-circuit voltage	V_oc_ref	43.3	V
Short-circuit current	I_sc_ref	5.59	A
Max-power voltage	V_mp_ref	36.1	V
Max-power current	I_mp_ref	4.99	A
Fill factor	FF	0.7442	—
Efficiency (STC)	η	14.11	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.003019	A/°C
Voc temperature coefficient	beta_oc	-0.158911	V/°C
Pmax temperature coefficient	gamma_r	-0.484	%/°C
NOCT	T_NOCT	46.9	°C
CEC Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.97927	V
Light-generated current (ref)	I_L_ref	5.60368	A
Saturation current (ref)	I_o_ref	—	A
Series resistance	R_s	0.26286	Ω
Shunt resistance (ref)	R_sh_ref	107.446	Ω
Cells in series	N_s	72	—
CEC Adjust factor	Adjust	16.9585	%

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Module Specifications

Technology Mono-c-Si

Bifacial No

BIPV No

Cells in series 72

Module area 1.277 m²

Dimensions 1.58 × 0.808 m

NOCT 46.9 °C

CEC listing date 11/16/2022