Anhui Rinengzhongtian Semiconductor Development QJM225-60

Mono-c-Si

224.96 W Pmax

36.41 V Voc

8.13 A Isc

29.6 V Vmp

7.6 A Imp

13.83 % eff.

0.76 FF

60 cells

IV curves not yet precomputed for this module. Run python manage.py precompute_iv_curves to generate them.

CEC Single-Diode Model Parameters

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	224.96	W
PTC Power	PTC	202.2	W
Open-circuit voltage	V_oc_ref	36.41	V
Short-circuit current	I_sc_ref	8.13	A
Max-power voltage	V_mp_ref	29.6	V
Max-power current	I_mp_ref	7.6	A
Fill factor	FF	0.76	—
Efficiency (STC)	η	13.83	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.002705	A/°C
Voc temperature coefficient	beta_oc	-0.119075	V/°C
Pmax temperature coefficient	gamma_r	-0.4682	%/°C
NOCT	T_NOCT	45.2	°C
CEC Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.52658	V
Light-generated current (ref)	I_L_ref	8.13928	A
Saturation current (ref)	I_o_ref	—	A
Series resistance	R_s	0.30375	Ω
Shunt resistance (ref)	R_sh_ref	266.124	Ω
Cells in series	N_s	60	—
CEC Adjust factor	Adjust	12.4913	%

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Module Specifications

Technology Mono-c-Si

Bifacial No

BIPV No

Cells in series 60

Module area 1.627 m²

Dimensions 1.64 × 0.992 m

NOCT 45.2 °C

CEC listing date 11/16/2022