Anhui Rinengzhongtian Semiconductor Development QJM310-72

Mono-c-Si

310.002 W Pmax

44.65 V Voc

9.14 A Isc

36.3 V Vmp

8.54 A Imp

15.98 % eff.

0.7596 FF

72 cells

IV & PV Curves at STC (1000 W/m², 25 °C)

IV Curves — Multiple Conditions

Irradiance sweep at 25 °C

Temperature sweep at 1000 W/m²

Single-Diode Model Parameters

Source: California Energy Commission module list · retrieved via SAM library · energy.ca.gov

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	310.002	W
PTC Power	PTC	278.9	W
Open-circuit voltage	V_oc_ref	44.65	V
Short-circuit current	I_sc_ref	9.14	A
Max-power voltage	V_mp_ref	36.3	V
Max-power current	I_mp_ref	8.54	A
Fill factor	FF	0.7596	—
Efficiency (STC)	η	15.98	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.003852	A/°C
Voc temperature coefficient	beta_oc	-0.151305	V/°C
Pmax temperature coefficient	gamma_r	-0.4676	%/°C
NOCT	T_NOCT	45.7	°C
Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.88991	V
Light-generated current (ref)	I_L_ref	9.15033	A
Saturation current (ref)	I_o_ref	—	A
Series resistance	R_s	0.32692	Ω
Shunt resistance (ref)	R_sh_ref	289.14	Ω
Cells in series	N_s	72	—
CEC Adjust factor	Adjust	10.4298	%

Actions

Open in IV Curve Explorer Generate PAN File Datasheet not on file CEC Source Data

Module Specifications

Technology Mono-c-Si

Bifacial No

BIPV No

Cells in series 72

Module area 1.94 m²

Dimensions 1.956 × 0.992 m

NOCT 45.7 °C

CEC listing date 11/16/2022

Measured Data

No measured data yet for this module.