Anhui Rinengzhongtian Semiconductor Development QJP255-72

Multi-c-Si

254.826 W Pmax

42.1 V Voc

8.13 A Isc

35.1 V Vmp

7.26 A Imp

13.14 % eff.

0.7445 FF

72 cells

IV curves not yet precomputed for this module. Run python manage.py precompute_iv_curves to generate them.

CEC Single-Diode Model Parameters

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	254.826	W
PTC Power	PTC	227.1	W
Open-circuit voltage	V_oc_ref	42.1	V
Short-circuit current	I_sc_ref	8.13	A
Max-power voltage	V_mp_ref	35.1	V
Max-power current	I_mp_ref	7.26	A
Fill factor	FF	0.7445	—
Efficiency (STC)	η	13.14	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.005935	A/°C
Voc temperature coefficient	beta_oc	-0.151981	V/°C
Pmax temperature coefficient	gamma_r	-0.462	%/°C
NOCT	T_NOCT	46.9	°C
CEC Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.91422	V
Light-generated current (ref)	I_L_ref	8.15018	A
Saturation current (ref)	I_o_ref	—	A
Series resistance	R_s	0.17864	Ω
Shunt resistance (ref)	R_sh_ref	71.981	Ω
Cells in series	N_s	72	—
CEC Adjust factor	Adjust	17.5755	%

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Module Specifications

Technology Multi-c-Si

Bifacial No

BIPV No

Cells in series 72

Module area 1.94 m²

Dimensions 1.956 × 0.992 m

NOCT 46.9 °C

CEC listing date 11/16/2022