Anhui Rinengzhongtian Semiconductor Development QJP260-60

Multi-c-Si

260.1 W Pmax

37.64 V Voc

9.09 A Isc

30.6 V Vmp

8.5 A Imp

15.99 % eff.

0.7602 FF

60 cells

IV curves not yet precomputed for this module. Run python manage.py precompute_iv_curves to generate them.

CEC Single-Diode Model Parameters

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	260.1	W
PTC Power	PTC	235.7	W
Open-circuit voltage	V_oc_ref	37.64	V
Short-circuit current	I_sc_ref	9.09	A
Max-power voltage	V_mp_ref	30.6	V
Max-power current	I_mp_ref	8.5	A
Fill factor	FF	0.7602	—
Efficiency (STC)	η	15.99	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.005096	A/°C
Voc temperature coefficient	beta_oc	-0.124287	V/°C
Pmax temperature coefficient	gamma_r	-0.4428	%/°C
NOCT	T_NOCT	45.4	°C
CEC Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.57185	V
Light-generated current (ref)	I_L_ref	9.10033	A
Saturation current (ref)	I_o_ref	—	A
Series resistance	R_s	0.28235	Ω
Shunt resistance (ref)	R_sh_ref	248.342	Ω
Cells in series	N_s	60	—
CEC Adjust factor	Adjust	10.2894	%

Actions

Module Specifications

Technology Multi-c-Si

Bifacial No

BIPV No

Cells in series 60

Module area 1.627 m²

Dimensions 1.64 × 0.992 m

NOCT 45.4 °C

CEC listing date 11/16/2022