Anhui Rinengzhongtian Semiconductor Development QJP275-60

Multi-c-Si

275.01 W Pmax

38.01 V Voc

9.52 A Isc

30.9 V Vmp

8.9 A Imp

16.9 % eff.

0.76 FF

60 cells

IV & PV Curves at STC (1000 W/m², 25 °C)

IV Curves — Multiple Conditions

Irradiance sweep at 25 °C

Temperature sweep at 1000 W/m²

Single-Diode Model Parameters

Source: California Energy Commission module list · retrieved via SAM library · energy.ca.gov

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	275.01	W
PTC Power	PTC	249.7	W
Open-circuit voltage	V_oc_ref	38.01	V
Short-circuit current	I_sc_ref	9.52	A
Max-power voltage	V_mp_ref	30.9	V
Max-power current	I_mp_ref	8.9	A
Fill factor	FF	0.76	—
Efficiency (STC)	η	16.9	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.005337	A/°C
Voc temperature coefficient	beta_oc	-0.125509	V/°C
Pmax temperature coefficient	gamma_r	-0.4428	%/°C
NOCT	T_NOCT	45.4	°C
Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.58749	V
Light-generated current (ref)	I_L_ref	9.53102	A
Saturation current (ref)	I_o_ref	—	A
Series resistance	R_s	0.27233	Ω
Shunt resistance (ref)	R_sh_ref	235.324	Ω
Cells in series	N_s	60	—
CEC Adjust factor	Adjust	10.3137	%

Actions

Open in IV Curve Explorer Generate PAN File Datasheet not on file CEC Source Data

Module Specifications

Technology Multi-c-Si

Bifacial No

BIPV No

Cells in series 60

Module area 1.627 m²

Dimensions 1.64 × 0.992 m

NOCT 45.4 °C

CEC listing date 11/16/2022

Measured Data

No measured data yet for this module.