Anhui Rinengzhongtian Semiconductor Development QJP295-72

Multi-c-Si

294.937 W Pmax

43.3 V Voc

9.15 A Isc

36.1 V Vmp

8.17 A Imp

15.2 % eff.

0.7444 FF

72 cells

IV curves not yet precomputed for this module. Run python manage.py precompute_iv_curves to generate them.

CEC Single-Diode Model Parameters

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	294.937	W
PTC Power	PTC	263.7	W
Open-circuit voltage	V_oc_ref	43.3	V
Short-circuit current	I_sc_ref	9.15	A
Max-power voltage	V_mp_ref	36.1	V
Max-power current	I_mp_ref	8.17	A
Fill factor	FF	0.7444	—
Efficiency (STC)	η	15.2	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.006679	A/°C
Voc temperature coefficient	beta_oc	-0.156313	V/°C
Pmax temperature coefficient	gamma_r	-0.462	%/°C
NOCT	T_NOCT	46.9	°C
CEC Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.96891	V
Light-generated current (ref)	I_L_ref	9.17275	A
Saturation current (ref)	I_o_ref	—	A
Series resistance	R_s	0.16328	Ω
Shunt resistance (ref)	R_sh_ref	65.669	Ω
Cells in series	N_s	72	—
CEC Adjust factor	Adjust	17.5882	%

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Module Specifications

Technology Multi-c-Si

Bifacial No

BIPV No

Cells in series 72

Module area 1.94 m²

Dimensions 1.956 × 0.992 m

NOCT 46.9 °C

CEC listing date 11/16/2022