Anji Technology AJP-M660-240
Multi-c-Si
240.538
W Pmax
36.84
V Voc
8.32
A Isc
30.72
V Vmp
7.83
A Imp
14.81
% eff.
0.7848
FF
60
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 240.538 | W |
| PTC Power | PTC | 213.3 | W |
| Open-circuit voltage | V_oc_ref | 36.84 | V |
| Short-circuit current | I_sc_ref | 8.32 | A |
| Max-power voltage | V_mp_ref | 30.72 | V |
| Max-power current | I_mp_ref | 7.83 | A |
| Fill factor | FF | 0.7848 | — |
| Efficiency (STC) | η | 14.81 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.00807 | A/°C |
| Voc temperature coefficient | beta_oc | -0.132256 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.493 | %/°C |
| NOCT | T_NOCT | 46.4 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.69423 | V |
| Light-generated current (ref) | I_L_ref | 8.32177 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.15008 | Ω |
| Shunt resistance (ref) | R_sh_ref | 706.266 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | 20.8811 | % |
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Module Specifications
Technology
Multi-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
1.624 m²
Dimensions
1.632 × 0.995 m
NOCT
46.4 °C
CEC listing date
11/16/2022
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