Changzhou Eging Photovoltaic Technology EG-185M48-C

Mono-c-Si

184.945 W Pmax

29.6 V Voc

8.8 A Isc

23.62 V Vmp

7.83 A Imp

13.99 % eff.

0.71 FF

48 cells

IV curves not yet precomputed for this module. Run python manage.py precompute_iv_curves to generate them.

CEC Single-Diode Model Parameters

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	184.945	W
PTC Power	PTC	164.3	W
Open-circuit voltage	V_oc_ref	29.6	V
Short-circuit current	I_sc_ref	8.8	A
Max-power voltage	V_mp_ref	23.62	V
Max-power current	I_mp_ref	7.83	A
Fill factor	FF	0.71	—
Efficiency (STC)	η	13.99	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.00264	A/°C
Voc temperature coefficient	beta_oc	-0.10656	V/°C
Pmax temperature coefficient	gamma_r	-0.48	%/°C
NOCT	T_NOCT	46.8	°C
CEC Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.2815	V
Light-generated current (ref)	I_L_ref	8.857	A
Saturation current (ref)	I_o_ref	—	A
Series resistance	R_s	0.28532	Ω
Shunt resistance (ref)	R_sh_ref	44.053	Ω
Cells in series	N_s	48	—
CEC Adjust factor	Adjust	8.2455	%

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Module Specifications

Technology Mono-c-Si

Bifacial No

BIPV No

Cells in series 48

Module area 1.322 m²

Dimensions 1.335 × 0.99 m

NOCT 46.8 °C

CEC listing date 11/16/2022