Changzhou Eging Photovoltaic Technology EG-190M48-C

Mono-c-Si

189.905 W Pmax

29.6 V Voc

8.91 A Isc

23.62 V Vmp

8.04 A Imp

14.36 % eff.

0.7201 FF

48 cells

IV curves not yet precomputed for this module. Run python manage.py precompute_iv_curves to generate them.

CEC Single-Diode Model Parameters

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	189.905	W
PTC Power	PTC	168.9	W
Open-circuit voltage	V_oc_ref	29.6	V
Short-circuit current	I_sc_ref	8.91	A
Max-power voltage	V_mp_ref	23.62	V
Max-power current	I_mp_ref	8.04	A
Fill factor	FF	0.7201	—
Efficiency (STC)	η	14.36	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.002673	A/°C
Voc temperature coefficient	beta_oc	-0.10656	V/°C
Pmax temperature coefficient	gamma_r	-0.48	%/°C
NOCT	T_NOCT	46.8	°C
CEC Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.26975	V
Light-generated current (ref)	I_L_ref	8.95469	A
Saturation current (ref)	I_o_ref	—	A
Series resistance	R_s	0.28302	Ω
Shunt resistance (ref)	R_sh_ref	56.429	Ω
Cells in series	N_s	48	—
CEC Adjust factor	Adjust	6.4956	%

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Module Specifications

Technology Mono-c-Si

Bifacial No

BIPV No

Cells in series 48

Module area 1.322 m²

Dimensions 1.335 × 0.99 m

NOCT 46.8 °C

CEC listing date 11/16/2022