Changzhou Eging Photovoltaic Technology EG-175P48-C

Multi-c-Si

175.392 W Pmax

29.2 V Voc

8.2 A Isc

23.2 V Vmp

7.56 A Imp

13.27 % eff.

0.7325 FF

48 cells

IV curves not yet precomputed for this module. Run python manage.py precompute_iv_curves to generate them.

CEC Single-Diode Model Parameters

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	175.392	W
PTC Power	PTC	156.1	W
Open-circuit voltage	V_oc_ref	29.2	V
Short-circuit current	I_sc_ref	8.2	A
Max-power voltage	V_mp_ref	23.2	V
Max-power current	I_mp_ref	7.56	A
Fill factor	FF	0.7325	—
Efficiency (STC)	η	13.27	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.00492	A/°C
Voc temperature coefficient	beta_oc	-0.1022	V/°C
Pmax temperature coefficient	gamma_r	-0.46	%/°C
NOCT	T_NOCT	46.7	°C
CEC Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.24222	V
Light-generated current (ref)	I_L_ref	8.22258	A
Saturation current (ref)	I_o_ref	—	A
Series resistance	R_s	0.318	Ω
Shunt resistance (ref)	R_sh_ref	115.461	Ω
Cells in series	N_s	48	—
CEC Adjust factor	Adjust	7.6475	%

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Module Specifications

Technology Multi-c-Si

Bifacial No

BIPV No

Cells in series 48

Module area 1.322 m²

Dimensions 1.335 × 0.99 m

NOCT 46.7 °C

CEC listing date 11/16/2022