Chint New Energy Technology Co. Ltd. CHSM66M(DG)/F-BH-635
Mono-c-Si
Bifacial
635.523
W Pmax
44.9
V Voc
18.17
A Isc
37.1
V Vmp
17.13
A Imp
20.97
% eff.
0.779
FF
66
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 635.523 | W |
| PTC Power | PTC | 589.0 | W |
| Open-circuit voltage | V_oc_ref | 44.9 | V |
| Short-circuit current | I_sc_ref | 18.17 | A |
| Max-power voltage | V_mp_ref | 37.1 | V |
| Max-power current | I_mp_ref | 17.13 | A |
| Fill factor | FF | 0.779 | — |
| Efficiency (STC) | η | 20.97 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.009085 | A/°C |
| Voc temperature coefficient | beta_oc | -0.130659 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.386 | %/°C |
| NOCT | T_NOCT | 44.8 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.75435 | V |
| Light-generated current (ref) | I_L_ref | 18.1828 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.14399 | Ω |
| Shunt resistance (ref) | R_sh_ref | 204.289 | Ω |
| Cells in series | N_s | 66 | — |
| CEC Adjust factor | Adjust | 9.7791 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
Yes
BIPV
No
Cells in series
66
Module area
3.03 m²
NOCT
44.8 °C
CEC listing date
11/16/2022
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