G-Star Pte Ltd GSD8J66M-660WT

Mono-c-Si

660 W Pmax

45.8 V Voc

18.31 A Isc

38.0 V Vmp

17.37 A Imp

21.43 % eff.

0.7871 FF

66 cells

Same test data as GSD8J66M-660BT. CEC lists each frame, color and backsheet version as its own listing.

IV & PV Curves at STC (1000 W/m², 25 °C)

IV Curves at Multiple Conditions

Irradiance sweep at 25 °C

Temperature sweep at 1000 W/m²

Single-Diode Model Parameters

Source: California Energy Commission module list · retrieved via SAM library · energy.ca.gov · All data sources

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	660.06	W
PTC Power	PTC	621.7	W
Open-circuit voltage	V_oc_ref	45.8	V
Short-circuit current	I_sc_ref	18.31	A
Max-power voltage	V_mp_ref	38.0	V
Max-power current	I_mp_ref	17.37	A
Fill factor	FF	0.7871	—
Efficiency (STC)	η	21.43	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.008661	A/°C
Voc temperature coefficient	beta_oc	-0.132362	V/°C
Pmax temperature coefficient	gamma_r	-0.3361	%/°C
NOCT	T_NOCT	43.4	°C
Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.68105	V
Light-generated current (ref)	I_L_ref	18.31871	A
Saturation current (ref)	I_o_ref	2.67e-11	A
Series resistance	R_s	0.14911	Ω
Shunt resistance (ref)	R_sh_ref	313.562	Ω
Cells in series	N_s	66	—
CEC Adjust factor	Adjust	-3.2201	%

Actions

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Module Specifications

Technology Mono-c-Si

Bifacial No

BIPV No

Cells in series 66

Module area 3.08 m²

NOCT 43.4 °C

Temp. coefficient of Pmax -0.336 %/°C

Temp. coefficient of Voc -0.289 %/°C

Temp. coefficient of Isc 0.047 %/°C

CEC list On the 23 Jun 2026 list

Parameters from 23 Jun 2026 list

Measured Data

No measured data yet for this module.

Same Test Data

2 listings with identical nameplate test data, one per frame, color or backsheet version.

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