G-Star Pte Ltd GSD8J66M-670BT
Mono-c-Si
670
W Pmax
46.2
V Voc
18.41
A Isc
38.4
V Vmp
17.45
A Imp
21.76
% eff.
0.7878
FF
66
cells
IV & PV Curves at STC (1000 W/m², 25 °C)
IV Curves at Multiple Conditions
Irradiance sweep at 25 °C
Temperature sweep at 1000 W/m²
Single-Diode Model Parameters
Source: California Energy Commission module list · retrieved via SAM library · energy.ca.gov · All data sources
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 670.08 | W |
| PTC Power | PTC | 631.3 | W |
| Open-circuit voltage | V_oc_ref | 46.2 | V |
| Short-circuit current | I_sc_ref | 18.41 | A |
| Max-power voltage | V_mp_ref | 38.4 | V |
| Max-power current | I_mp_ref | 17.45 | A |
| Fill factor | FF | 0.7878 | — |
| Efficiency (STC) | η | 21.76 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.008708 | A/°C |
| Voc temperature coefficient | beta_oc | -0.133518 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.3361 | %/°C |
| NOCT | T_NOCT | 43.4 | °C |
| Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.69797 | V |
| Light-generated current (ref) | I_L_ref | 18.41978 | A |
| Saturation current (ref) | I_o_ref | 2.78e-11 | A |
| Series resistance | R_s | 0.14507 | Ω |
| Shunt resistance (ref) | R_sh_ref | 272.983 | Ω |
| Cells in series | N_s | 66 | — |
| CEC Adjust factor | Adjust | -2.942 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
66
Module area
3.08 m²
NOCT
43.4 °C
Temp. coefficient of Pmax
-0.336 %/°C
Temp. coefficient of Voc
-0.289 %/°C
Temp. coefficient of Isc
0.047 %/°C
CEC list
On the 23 Jun 2026 list
Parameters from
23 Jun 2026 list
Measured Data
No measured data yet for this module.
Same Test Data
2 listings with identical nameplate test data, one per frame, color or backsheet version.
- GSD8J66M-670BT Main listing, this page
- GSD8J66M-670WT
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