G-Star Pte Ltd GSD8K66T-725WT
Mono-c-Si
725
W Pmax
49.55
V Voc
18.3
A Isc
41.1
V Vmp
17.64
A Imp
23.54
% eff.
0.7996
FF
66
cells
Same test data as GSD8K66T-725BT. CEC lists each frame, color and backsheet version as its own listing.
IV & PV Curves at STC (1000 W/m², 25 °C)
IV Curves at Multiple Conditions
Irradiance sweep at 25 °C
Temperature sweep at 1000 W/m²
Single-Diode Model Parameters
Source: California Energy Commission module list · retrieved via SAM library · energy.ca.gov · All data sources
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 725.004 | W |
| PTC Power | PTC | 690.6 | W |
| Open-circuit voltage | V_oc_ref | 49.55 | V |
| Short-circuit current | I_sc_ref | 18.3 | A |
| Max-power voltage | V_mp_ref | 41.1 | V |
| Max-power current | I_mp_ref | 17.64 | A |
| Fill factor | FF | 0.7996 | — |
| Efficiency (STC) | η | 23.54 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.007594 | A/°C |
| Voc temperature coefficient | beta_oc | -0.116492 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.2905 | %/°C |
| NOCT | T_NOCT | 43.1 | °C |
| Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.69267 | V |
| Light-generated current (ref) | I_L_ref | 18.3 | A |
| Saturation current (ref) | I_o_ref | 3.54e-12 | A |
| Series resistance | R_s | 0.16021 | Ω |
| Shunt resistance (ref) | R_sh_ref | 854438.981 | Ω |
| Cells in series | N_s | 66 | — |
| CEC Adjust factor | Adjust | 0.9916 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
66
Module area
3.08 m²
NOCT
43.1 °C
Temp. coefficient of Pmax
-0.291 %/°C
Temp. coefficient of Voc
-0.235 %/°C
Temp. coefficient of Isc
0.041 %/°C
CEC list
On the 23 Jun 2026 list
Parameters from
23 Jun 2026 list
Measured Data
No measured data yet for this module.
Same Test Data
2 listings with identical nameplate test data, one per frame, color or backsheet version.
- GSD8K66T-725BT Main listing
- GSD8K66T-725WT This page
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