G-Star Pte Ltd GSD8R66T-640BT

Mono-c-Si

640 W Pmax

49.86 V Voc

15.99 A Isc

42.06 V Vmp

15.22 A Imp

23.89 % eff.

0.8029 FF

66 cells

IV & PV Curves at STC (1000 W/m², 25 °C)

IV Curves at Multiple Conditions

Irradiance sweep at 25 °C

Temperature sweep at 1000 W/m²

Single-Diode Model Parameters

Source: California Energy Commission module list · retrieved via SAM library · energy.ca.gov · All data sources

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	640.153	W
PTC Power	PTC	609.6	W
Open-circuit voltage	V_oc_ref	49.86	V
Short-circuit current	I_sc_ref	15.99	A
Max-power voltage	V_mp_ref	42.06	V
Max-power current	I_mp_ref	15.22	A
Fill factor	FF	0.8029	—
Efficiency (STC)	η	23.89	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.006668	A/°C
Voc temperature coefficient	beta_oc	-0.117919	V/°C
Pmax temperature coefficient	gamma_r	-0.2926	%/°C
NOCT	T_NOCT	43.1	°C
Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.72168	V
Light-generated current (ref)	I_L_ref	15.99669	A
Saturation current (ref)	I_o_ref	4.2e-12	A
Series resistance	R_s	0.1519	Ω
Shunt resistance (ref)	R_sh_ref	363.173	Ω
Cells in series	N_s	66	—
CEC Adjust factor	Adjust	2.9864	%

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Module Specifications

Technology Mono-c-Si

Bifacial No

BIPV No

Cells in series 66

Module area 2.68 m²

NOCT 43.1 °C

Temp. coefficient of Pmax -0.293 %/°C

Temp. coefficient of Voc -0.237 %/°C

Temp. coefficient of Isc 0.042 %/°C

CEC list On the 23 Jun 2026 list

Parameters from 23 Jun 2026 list

Measured Data

No measured data yet for this module.

Same Test Data

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