G-Star Pte Ltd GSD8R66T-645WT

Mono-c-Si

645 W Pmax

50.08 V Voc

16.03 A Isc

42.27 V Vmp

15.26 A Imp

24.07 % eff.

0.8035 FF

66 cells

Same test data as GSD8R66T-645BT. CEC lists each frame, color and backsheet version as its own listing.

IV & PV Curves at STC (1000 W/m², 25 °C)

IV Curves at Multiple Conditions

Irradiance sweep at 25 °C

Temperature sweep at 1000 W/m²

Single-Diode Model Parameters

Source: California Energy Commission module list · retrieved via SAM library · energy.ca.gov · All data sources

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	645.04	W
PTC Power	PTC	614.5	W
Open-circuit voltage	V_oc_ref	50.08	V
Short-circuit current	I_sc_ref	16.03	A
Max-power voltage	V_mp_ref	42.27	V
Max-power current	I_mp_ref	15.26	A
Fill factor	FF	0.8035	—
Efficiency (STC)	η	24.07	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.006685	A/°C
Voc temperature coefficient	beta_oc	-0.118439	V/°C
Pmax temperature coefficient	gamma_r	-0.2926	%/°C
NOCT	T_NOCT	43.1	°C
Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.72964	V
Light-generated current (ref)	I_L_ref	16.03654	A
Saturation current (ref)	I_o_ref	4.24e-12	A
Series resistance	R_s	0.15038	Ω
Shunt resistance (ref)	R_sh_ref	368.396	Ω
Cells in series	N_s	66	—
CEC Adjust factor	Adjust	3.0391	%

Actions

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Module Specifications

Technology Mono-c-Si

Bifacial No

BIPV No

Cells in series 66

Module area 2.68 m²

NOCT 43.1 °C

Temp. coefficient of Pmax -0.293 %/°C

Temp. coefficient of Voc -0.236 %/°C

Temp. coefficient of Isc 0.042 %/°C

CEC list On the 23 Jun 2026 list

Parameters from 23 Jun 2026 list

Measured Data

No measured data yet for this module.

Same Test Data

2 listings with identical nameplate test data, one per frame, color or backsheet version.

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