Gintung Energy ASEC-195G6M68
Multi-c-Si
195.024
W Pmax
29.87
V Voc
8.48
A Isc
23.9
V Vmp
8.16
A Imp
14.96
% eff.
0.7699
FF
48
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 195.024 | W |
| PTC Power | PTC | 174.6 | W |
| Open-circuit voltage | V_oc_ref | 29.87 | V |
| Short-circuit current | I_sc_ref | 8.48 | A |
| Max-power voltage | V_mp_ref | 23.9 | V |
| Max-power current | I_mp_ref | 8.16 | A |
| Fill factor | FF | 0.7699 | — |
| Efficiency (STC) | η | 14.96 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.001815 | A/°C |
| Voc temperature coefficient | beta_oc | -0.098541 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.4702 | %/°C |
| NOCT | T_NOCT | 46.1 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.22314 | V |
| Light-generated current (ref) | I_L_ref | 8.65342 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.29322 | Ω |
| Shunt resistance (ref) | R_sh_ref | 854.079 | Ω |
| Cells in series | N_s | 48 | — |
| CEC Adjust factor | Adjust | 6.7257 | % |
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Module Specifications
Technology
Multi-c-Si
Bifacial
No
BIPV
No
Cells in series
48
Module area
1.304 m²
Dimensions
1.319 × 0.989 m
NOCT
46.1 °C
CEC listing date
11/16/2022
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