Gintung Energy ASEC-200G6S68
Mono-c-Si
200.018
W Pmax
29.93
V Voc
8.77
A Isc
23.84
V Vmp
8.39
A Imp
15.34
% eff.
0.762
FF
48
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 200.018 | W |
| PTC Power | PTC | 175.2 | W |
| Open-circuit voltage | V_oc_ref | 29.93 | V |
| Short-circuit current | I_sc_ref | 8.77 | A |
| Max-power voltage | V_mp_ref | 23.84 | V |
| Max-power current | I_mp_ref | 8.39 | A |
| Fill factor | FF | 0.762 | — |
| Efficiency (STC) | η | 15.34 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.006393 | A/°C |
| Voc temperature coefficient | beta_oc | -0.10266 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.4502 | %/°C |
| NOCT | T_NOCT | 51.4 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.26205 | V |
| Light-generated current (ref) | I_L_ref | 8.95341 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.29061 | Ω |
| Shunt resistance (ref) | R_sh_ref | 364.345 | Ω |
| Cells in series | N_s | 48 | — |
| CEC Adjust factor | Adjust | 8.0041 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
48
Module area
1.304 m²
Dimensions
1.319 × 0.989 m
NOCT
51.4 °C
CEC listing date
11/16/2022
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