Gintung Energy ASEC-205G6S
Mono-c-Si
205.149
W Pmax
33.64
V Voc
8.32
A Isc
25.87
V Vmp
7.93
A Imp
14.58
% eff.
0.733
FF
54
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 205.149 | W |
| PTC Power | PTC | 183.6 | W |
| Open-circuit voltage | V_oc_ref | 33.64 | V |
| Short-circuit current | I_sc_ref | 8.32 | A |
| Max-power voltage | V_mp_ref | 25.87 | V |
| Max-power current | I_mp_ref | 7.93 | A |
| Fill factor | FF | 0.733 | — |
| Efficiency (STC) | η | 14.58 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.011315 | A/°C |
| Voc temperature coefficient | beta_oc | -0.124804 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.514 | %/°C |
| NOCT | T_NOCT | 44.2 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.5468 | V |
| Light-generated current (ref) | I_L_ref | 8.48849 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.44583 | Ω |
| Shunt resistance (ref) | R_sh_ref | 2997.25 | Ω |
| Cells in series | N_s | 54 | — |
| CEC Adjust factor | Adjust | 16.5335 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
54
Module area
1.407 m²
Dimensions
1.458 × 0.965 m
NOCT
44.2 °C
CEC listing date
11/16/2022
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