Hansol Technics Co. Ltd. HS315PD-AN1
Multi-c-Si
315.302
W Pmax
44.9
V Voc
9.08
A Isc
36.2
V Vmp
8.71
A Imp
16.42
% eff.
0.7734
FF
72
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 315.302 | W |
| PTC Power | PTC | 289.6 | W |
| Open-circuit voltage | V_oc_ref | 44.9 | V |
| Short-circuit current | I_sc_ref | 9.08 | A |
| Max-power voltage | V_mp_ref | 36.2 | V |
| Max-power current | I_mp_ref | 8.71 | A |
| Fill factor | FF | 0.7734 | — |
| Efficiency (STC) | η | 16.42 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.005085 | A/°C |
| Voc temperature coefficient | beta_oc | -0.133802 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.379 | %/°C |
| NOCT | T_NOCT | 45.7 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.72386 | V |
| Light-generated current (ref) | I_L_ref | 9.17092 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.40646 | Ω |
| Shunt resistance (ref) | R_sh_ref | 32230.4 | Ω |
| Cells in series | N_s | 72 | — |
| CEC Adjust factor | Adjust | 3.3278 | % |
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Module Specifications
Technology
Multi-c-Si
Bifacial
No
BIPV
No
Cells in series
72
Module area
1.92 m²
NOCT
45.7 °C
CEC listing date
11/16/2022
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