LG Electronics Inc. LG220R1W-G2
Multi-c-Si
220.703
W Pmax
36.0
V Voc
8.06
A Isc
28.7
V Vmp
7.69
A Imp
13.85
% eff.
0.7606
FF
60
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 220.703 | W |
| PTC Power | PTC | 193.2 | W |
| Open-circuit voltage | V_oc_ref | 36.0 | V |
| Short-circuit current | I_sc_ref | 8.06 | A |
| Max-power voltage | V_mp_ref | 28.7 | V |
| Max-power current | I_mp_ref | 7.69 | A |
| Fill factor | FF | 0.7606 | — |
| Efficiency (STC) | η | 13.85 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.003982 | A/°C |
| Voc temperature coefficient | beta_oc | -0.143208 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.5367 | %/°C |
| NOCT | T_NOCT | 46.2 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.62826 | V |
| Light-generated current (ref) | I_L_ref | 8.22742 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.34859 | Ω |
| Shunt resistance (ref) | R_sh_ref | 529.512 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | 6.2499 | % |
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Module Specifications
Technology
Multi-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
1.593 m²
Dimensions
1.626 × 0.98 m
NOCT
46.2 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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