LG Electronics Inc. LG235N8K-G4
Mono-c-Si
235.216
W Pmax
30.2
V Voc
9.96
A Isc
24.1
V Vmp
9.76
A Imp
18.46
% eff.
0.782
FF
48
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 235.216 | W |
| PTC Power | PTC | 217.6 | W |
| Open-circuit voltage | V_oc_ref | 30.2 | V |
| Short-circuit current | I_sc_ref | 9.96 | A |
| Max-power voltage | V_mp_ref | 24.1 | V |
| Max-power current | I_mp_ref | 9.76 | A |
| Fill factor | FF | 0.782 | — |
| Efficiency (STC) | η | 18.46 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.002988 | A/°C |
| Voc temperature coefficient | beta_oc | -0.08456 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.38 | %/°C |
| NOCT | T_NOCT | 44.6 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.12469 | V |
| Light-generated current (ref) | I_L_ref | 10.3759 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.27894 | Ω |
| Shunt resistance (ref) | R_sh_ref | 250.799 | Ω |
| Cells in series | N_s | 48 | — |
| CEC Adjust factor | Adjust | 3.3744 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
48
Module area
1.274 m²
Dimensions
1.3 × 0.98 m
NOCT
44.6 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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