LG Electronics Inc. LG250S1C-G3
Mono-c-Si
250.16
W Pmax
38.26
V Voc
8.62
A Isc
30.77
V Vmp
8.13
A Imp
15.4
% eff.
0.7585
FF
60
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 250.16 | W |
| PTC Power | PTC | 226.1 | W |
| Open-circuit voltage | V_oc_ref | 38.26 | V |
| Short-circuit current | I_sc_ref | 8.62 | A |
| Max-power voltage | V_mp_ref | 30.77 | V |
| Max-power current | I_mp_ref | 8.13 | A |
| Fill factor | FF | 0.7585 | — |
| Efficiency (STC) | η | 15.4 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.004601 | A/°C |
| Voc temperature coefficient | beta_oc | -0.130873 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.4589 | %/°C |
| NOCT | T_NOCT | 44.9 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.60427 | V |
| Light-generated current (ref) | I_L_ref | 8.62242 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.34587 | Ω |
| Shunt resistance (ref) | R_sh_ref | 1234.4 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | 7.3795 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
1.624 m²
Dimensions
1.634 × 0.994 m
NOCT
44.9 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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