LG Electronics Inc. LG255S1C-G2
Mono-c-Si
255.0
W Pmax
37.2
V Voc
8.85
A Isc
30.0
V Vmp
8.5
A Imp
16.01
% eff.
0.7746
FF
60
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 255.0 | W |
| PTC Power | PTC | 229.8 | W |
| Open-circuit voltage | V_oc_ref | 37.2 | V |
| Short-circuit current | I_sc_ref | 8.85 | A |
| Max-power voltage | V_mp_ref | 30.0 | V |
| Max-power current | I_mp_ref | 8.5 | A |
| Fill factor | FF | 0.7746 | — |
| Efficiency (STC) | η | 16.01 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.003688 | A/°C |
| Voc temperature coefficient | beta_oc | -0.125748 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.4724 | %/°C |
| NOCT | T_NOCT | 45.2 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.56566 | V |
| Light-generated current (ref) | I_L_ref | 9.032 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.3091 | Ω |
| Shunt resistance (ref) | R_sh_ref | 677.9 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | 9.5826 | % |
Actions
Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
1.593 m²
Dimensions
1.626 × 0.98 m
NOCT
45.2 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
Related Models
© 2026 PV Ivy. All Rights Reserved.