LG Electronics Inc. LG255S1K-G3
Mono-c-Si
255.193
W Pmax
38.41
V Voc
8.72
A Isc
30.97
V Vmp
8.24
A Imp
15.71
% eff.
0.7619
FF
60
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 255.193 | W |
| PTC Power | PTC | 227.0 | W |
| Open-circuit voltage | V_oc_ref | 38.41 | V |
| Short-circuit current | I_sc_ref | 8.72 | A |
| Max-power voltage | V_mp_ref | 30.97 | V |
| Max-power current | I_mp_ref | 8.24 | A |
| Fill factor | FF | 0.7619 | — |
| Efficiency (STC) | η | 15.71 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.004325 | A/°C |
| Voc temperature coefficient | beta_oc | -0.124717 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.4447 | %/°C |
| NOCT | T_NOCT | 48.8 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.57909 | V |
| Light-generated current (ref) | I_L_ref | 8.72183 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.33996 | Ω |
| Shunt resistance (ref) | R_sh_ref | 1616.55 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | 8.9523 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
1.624 m²
Dimensions
1.634 × 0.994 m
NOCT
48.8 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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