LG Electronics Inc. LG280N1C-G3
Mono-c-Si
282.555
W Pmax
38.9
V Voc
9.56
A Isc
31.5
V Vmp
8.97
A Imp
17.79
% eff.
0.7598
FF
60
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 282.555 | W |
| PTC Power | PTC | 257.6 | W |
| Open-circuit voltage | V_oc_ref | 38.9 | V |
| Short-circuit current | I_sc_ref | 9.56 | A |
| Max-power voltage | V_mp_ref | 31.5 | V |
| Max-power current | I_mp_ref | 8.97 | A |
| Fill factor | FF | 0.7598 | — |
| Efficiency (STC) | η | 17.79 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.002868 | A/°C |
| Voc temperature coefficient | beta_oc | -0.1167 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.43 | %/°C |
| NOCT | T_NOCT | 43.5 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.5508 | V |
| Light-generated current (ref) | I_L_ref | 9.57051 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.30966 | Ω |
| Shunt resistance (ref) | R_sh_ref | 281.656 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | 11.1593 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
1.588 m²
Dimensions
1.62 × 0.98 m
NOCT
43.5 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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