LG Electronics Inc. LG295N1W-G4
Mono-c-Si
295.104
W Pmax
39.5
V Voc
9.87
A Isc
31.8
V Vmp
9.28
A Imp
18.58
% eff.
0.7569
FF
60
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 295.104 | W |
| PTC Power | PTC | 268.6 | W |
| Open-circuit voltage | V_oc_ref | 39.5 | V |
| Short-circuit current | I_sc_ref | 9.87 | A |
| Max-power voltage | V_mp_ref | 31.8 | V |
| Max-power current | I_mp_ref | 9.28 | A |
| Fill factor | FF | 0.7569 | — |
| Efficiency (STC) | η | 18.58 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.002961 | A/°C |
| Voc temperature coefficient | beta_oc | -0.1106 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.38 | %/°C |
| NOCT | T_NOCT | 48.8 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.48083 | V |
| Light-generated current (ref) | I_L_ref | 9.88243 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.34794 | Ω |
| Shunt resistance (ref) | R_sh_ref | 276.218 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | 4.837 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
1.588 m²
Dimensions
1.62 × 0.98 m
NOCT
48.8 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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