LG Electronics Inc. LG295S1C-G4
Mono-c-Si
295.1
W Pmax
39.1
V Voc
9.48
A Isc
32.5
V Vmp
9.08
A Imp
18.58
% eff.
0.7961
FF
60
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 295.1 | W |
| PTC Power | PTC | 266.3 | W |
| Open-circuit voltage | V_oc_ref | 39.1 | V |
| Short-circuit current | I_sc_ref | 9.48 | A |
| Max-power voltage | V_mp_ref | 32.5 | V |
| Max-power current | I_mp_ref | 9.08 | A |
| Fill factor | FF | 0.7961 | — |
| Efficiency (STC) | η | 18.58 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.002844 | A/°C |
| Voc temperature coefficient | beta_oc | -0.1173 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.42 | %/°C |
| NOCT | T_NOCT | 48.4 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.55477 | V |
| Light-generated current (ref) | I_L_ref | 9.57697 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.20759 | Ω |
| Shunt resistance (ref) | R_sh_ref | 915.824 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | 10.6372 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
1.588 m²
Dimensions
1.62 × 0.98 m
NOCT
48.4 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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