LG Electronics Inc. LG315N1K-L5
Mono-c-Si
315.052
W Pmax
40.4
V Voc
10.4
A Isc
31.6
V Vmp
9.97
A Imp
18.21
% eff.
0.7498
FF
60
cells
IV & PV Curves at STC (1000 W/m², 25 °C)
IV Curves — Multiple Conditions
Irradiance sweep at 25 °C
Temperature sweep at 1000 W/m²
Single-Diode Model Parameters
Source: California Energy Commission module list · retrieved via SAM library · energy.ca.gov
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 315.052 | W |
| PTC Power | PTC | 292.6 | W |
| Open-circuit voltage | V_oc_ref | 40.4 | V |
| Short-circuit current | I_sc_ref | 10.4 | A |
| Max-power voltage | V_mp_ref | 31.6 | V |
| Max-power current | I_mp_ref | 9.97 | A |
| Fill factor | FF | 0.7498 | — |
| Efficiency (STC) | η | 18.21 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.0026 | A/°C |
| Voc temperature coefficient | beta_oc | -0.104232 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.343 | %/°C |
| NOCT | T_NOCT | 45.8 | °C |
| Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.41214 | V |
| Light-generated current (ref) | I_L_ref | 10.5061 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.45714 | Ω |
| Shunt resistance (ref) | R_sh_ref | 2239.5 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | -2.6083 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
1.73 m²
NOCT
45.8 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
Measured Data
No measured data yet for this module.
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