LG Electronics Inc. LG330N1W-N5
Mono-c-Si
330.27
W Pmax
41.0
V Voc
10.61
A Isc
32.7
V Vmp
10.1
A Imp
19.09
% eff.
0.7592
FF
60
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 330.27 | W |
| PTC Power | PTC | 307.9 | W |
| Open-circuit voltage | V_oc_ref | 41.0 | V |
| Short-circuit current | I_sc_ref | 10.61 | A |
| Max-power voltage | V_mp_ref | 32.7 | V |
| Max-power current | I_mp_ref | 10.1 | A |
| Fill factor | FF | 0.7592 | — |
| Efficiency (STC) | η | 19.09 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.003395 | A/°C |
| Voc temperature coefficient | beta_oc | -0.10537 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.342 | %/°C |
| NOCT | T_NOCT | 44.9 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.46103 | V |
| Light-generated current (ref) | I_L_ref | 10.7299 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.38205 | Ω |
| Shunt resistance (ref) | R_sh_ref | 296.797 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | 2.0915 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
1.73 m²
NOCT
44.9 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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