LG Electronics Inc. LG375M1K-A6
Mono-c-Si
375.155
W Pmax
42.0
V Voc
11.0
A Isc
35.9
V Vmp
10.45
A Imp
20.96
% eff.
0.812
FF
60
cells
IV & PV Curves at STC (1000 W/m², 25 °C)
IV Curves — Multiple Conditions
Irradiance sweep at 25 °C
Temperature sweep at 1000 W/m²
Single-Diode Model Parameters
Source: California Energy Commission module list · retrieved via SAM library · energy.ca.gov
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 375.155 | W |
| PTC Power | PTC | 346.1 | W |
| Open-circuit voltage | V_oc_ref | 42.0 | V |
| Short-circuit current | I_sc_ref | 11.0 | A |
| Max-power voltage | V_mp_ref | 35.9 | V |
| Max-power current | I_mp_ref | 10.45 | A |
| Fill factor | FF | 0.812 | — |
| Efficiency (STC) | η | 20.96 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.00286 | A/°C |
| Voc temperature coefficient | beta_oc | -0.1071 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.342 | %/°C |
| NOCT | T_NOCT | 48.7 | °C |
| Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.53236 | V |
| Light-generated current (ref) | I_L_ref | 11.0034 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.11904 | Ω |
| Shunt resistance (ref) | R_sh_ref | 390.061 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | 8.6006 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
1.79 m²
NOCT
48.7 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
Measured Data
No measured data yet for this module.
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