LG Electronics Inc. LG375N1K-E6
Mono-c-Si
375.175
W Pmax
41.5
V Voc
11.33
A Isc
34.9
V Vmp
10.75
A Imp
20.96
% eff.
0.7979
FF
60
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 375.175 | W |
| PTC Power | PTC | 348.8 | W |
| Open-circuit voltage | V_oc_ref | 41.5 | V |
| Short-circuit current | I_sc_ref | 11.33 | A |
| Max-power voltage | V_mp_ref | 34.9 | V |
| Max-power current | I_mp_ref | 10.75 | A |
| Fill factor | FF | 0.7979 | — |
| Efficiency (STC) | η | 20.96 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.002946 | A/°C |
| Voc temperature coefficient | beta_oc | -0.10707 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.331 | %/°C |
| NOCT | T_NOCT | 47.2 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.48352 | V |
| Light-generated current (ref) | I_L_ref | 11.3359 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.17887 | Ω |
| Shunt resistance (ref) | R_sh_ref | 345.583 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | 2.5189 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
1.79 m²
NOCT
47.2 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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