LG Electronics Inc. LG375N2C-B3
Mono-c-Si
375.18
W Pmax
48.6
V Voc
9.99
A Isc
39.0
V Vmp
9.62
A Imp
19.74
% eff.
0.7727
FF
72
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 375.18 | W |
| PTC Power | PTC | 343.1 | W |
| Open-circuit voltage | V_oc_ref | 48.6 | V |
| Short-circuit current | I_sc_ref | 9.99 | A |
| Max-power voltage | V_mp_ref | 39.0 | V |
| Max-power current | I_mp_ref | 9.62 | A |
| Fill factor | FF | 0.7727 | — |
| Efficiency (STC) | η | 19.74 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.001998 | A/°C |
| Voc temperature coefficient | beta_oc | -0.13608 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.39 | %/°C |
| NOCT | T_NOCT | 47.5 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.81549 | V |
| Light-generated current (ref) | I_L_ref | 10.1991 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.42959 | Ω |
| Shunt resistance (ref) | R_sh_ref | 528.469 | Ω |
| Cells in series | N_s | 72 | — |
| CEC Adjust factor | Adjust | 4.1953 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
72
Module area
1.901 m²
Dimensions
1.94 × 0.98 m
NOCT
47.5 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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