LG Electronics Inc. LG375Q1C-V5
Mono-c-Si
375.348
W Pmax
42.8
V Voc
10.83
A Isc
37.2
V Vmp
10.09
A Imp
22.43
% eff.
0.8098
FF
60
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 375.348 | W |
| PTC Power | PTC | 353.8 | W |
| Open-circuit voltage | V_oc_ref | 42.8 | V |
| Short-circuit current | I_sc_ref | 10.83 | A |
| Max-power voltage | V_mp_ref | 37.2 | V |
| Max-power current | I_mp_ref | 10.09 | A |
| Fill factor | FF | 0.8098 | — |
| Efficiency (STC) | η | 22.43 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.003106 | A/°C |
| Voc temperature coefficient | beta_oc | -0.104004 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.3134 | %/°C |
| NOCT | T_NOCT | 44.5 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.53711 | V |
| Light-generated current (ref) | I_L_ref | 10.8359 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.06175 | Ω |
| Shunt resistance (ref) | R_sh_ref | 112.721 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | 9.8744 | % |
Actions
Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
1.6733 m²
NOCT
44.5 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
Related Models
© 2026 PV Ivy. All Rights Reserved.