LG Electronics Inc. LG385N2C-A5
Mono-c-Si
385.332
W Pmax
49.0
V Voc
10.35
A Isc
39.4
V Vmp
9.78
A Imp
19.27
% eff.
0.7598
FF
72
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 385.332 | W |
| PTC Power | PTC | 354.2 | W |
| Open-circuit voltage | V_oc_ref | 49.0 | V |
| Short-circuit current | I_sc_ref | 10.35 | A |
| Max-power voltage | V_mp_ref | 39.4 | V |
| Max-power current | I_mp_ref | 9.78 | A |
| Fill factor | FF | 0.7598 | — |
| Efficiency (STC) | η | 19.27 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.003105 | A/°C |
| Voc temperature coefficient | beta_oc | -0.1274 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.36 | %/°C |
| NOCT | T_NOCT | 47.7 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.78536 | V |
| Light-generated current (ref) | I_L_ref | 10.3588 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.42713 | Ω |
| Shunt resistance (ref) | R_sh_ref | 503.163 | Ω |
| Cells in series | N_s | 72 | — |
| CEC Adjust factor | Adjust | 6.1368 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
72
Module area
2.0 m²
Dimensions
2.0 × 1.0 m
NOCT
47.7 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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