LG Electronics Inc. LG415N2W-N5
Mono-c-Si
415.547
W Pmax
49.5
V Voc
10.56
A Isc
40.7
V Vmp
10.21
A Imp
20.07
% eff.
0.795
FF
72
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 415.547 | W |
| PTC Power | PTC | 386.1 | W |
| Open-circuit voltage | V_oc_ref | 49.5 | V |
| Short-circuit current | I_sc_ref | 10.56 | A |
| Max-power voltage | V_mp_ref | 40.7 | V |
| Max-power current | I_mp_ref | 10.21 | A |
| Fill factor | FF | 0.795 | — |
| Efficiency (STC) | η | 20.07 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.002429 | A/°C |
| Voc temperature coefficient | beta_oc | -0.127215 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.341 | %/°C |
| NOCT | T_NOCT | 46.2 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.76492 | V |
| Light-generated current (ref) | I_L_ref | 10.7795 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.3251 | Ω |
| Shunt resistance (ref) | R_sh_ref | 483.237 | Ω |
| Cells in series | N_s | 72 | — |
| CEC Adjust factor | Adjust | 2.3657 | % |
Actions
Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
72
Module area
2.07 m²
NOCT
46.2 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
Related Models
© 2026 PV Ivy. All Rights Reserved.