LG Electronics Inc. LG415N2W-V5
Mono-c-Si
415.492
W Pmax
49.6
V Voc
10.59
A Isc
41.8
V Vmp
9.94
A Imp
20.77
% eff.
0.791
FF
72
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 415.492 | W |
| PTC Power | PTC | 382.2 | W |
| Open-circuit voltage | V_oc_ref | 49.6 | V |
| Short-circuit current | I_sc_ref | 10.59 | A |
| Max-power voltage | V_mp_ref | 41.8 | V |
| Max-power current | I_mp_ref | 9.94 | A |
| Fill factor | FF | 0.791 | — |
| Efficiency (STC) | η | 20.77 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.00233 | A/°C |
| Voc temperature coefficient | beta_oc | -0.127472 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.347 | %/°C |
| NOCT | T_NOCT | 48.9 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.81114 | V |
| Light-generated current (ref) | I_L_ref | 10.601 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.21105 | Ω |
| Shunt resistance (ref) | R_sh_ref | 202.749 | Ω |
| Cells in series | N_s | 72 | — |
| CEC Adjust factor | Adjust | 7.9446 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
72
Module area
2.0 m²
NOCT
48.9 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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