LG Electronics Inc. LG420N3C-V6
Mono-c-Si
Bifacial
420.151
W Pmax
45.6
V Voc
11.54
A Isc
38.3
V Vmp
10.97
A Imp
22.11
% eff.
0.7984
FF
66
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 420.151 | W |
| PTC Power | PTC | 388.7 | W |
| Open-circuit voltage | V_oc_ref | 45.6 | V |
| Short-circuit current | I_sc_ref | 11.54 | A |
| Max-power voltage | V_mp_ref | 38.3 | V |
| Max-power current | I_mp_ref | 10.97 | A |
| Fill factor | FF | 0.7984 | — |
| Efficiency (STC) | η | 22.11 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.003577 | A/°C |
| Voc temperature coefficient | beta_oc | -0.121296 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.352 | %/°C |
| NOCT | T_NOCT | 47.8 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.68091 | V |
| Light-generated current (ref) | I_L_ref | 11.5436 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.18725 | Ω |
| Shunt resistance (ref) | R_sh_ref | 595.986 | Ω |
| Cells in series | N_s | 66 | — |
| CEC Adjust factor | Adjust | 6.4297 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
Yes
BIPV
No
Cells in series
66
Module area
1.9 m²
NOCT
47.8 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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