LG Electronics Inc. LG420QAK-A6
Mono-c-Si
420.847
W Pmax
48.0
V Voc
10.83
A Isc
41.3
V Vmp
10.19
A Imp
21.15
% eff.
0.8096
FF
66
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 420.847 | W |
| PTC Power | PTC | 391.2 | W |
| Open-circuit voltage | V_oc_ref | 48.0 | V |
| Short-circuit current | I_sc_ref | 10.83 | A |
| Max-power voltage | V_mp_ref | 41.3 | V |
| Max-power current | I_mp_ref | 10.19 | A |
| Fill factor | FF | 0.8096 | — |
| Efficiency (STC) | η | 21.15 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.003466 | A/°C |
| Voc temperature coefficient | beta_oc | -0.11472 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.297 | %/°C |
| NOCT | T_NOCT | 49.3 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.67746 | V |
| Light-generated current (ref) | I_L_ref | 10.8373 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.12564 | Ω |
| Shunt resistance (ref) | R_sh_ref | 185.75 | Ω |
| Cells in series | N_s | 66 | — |
| CEC Adjust factor | Adjust | 4.9165 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
66
Module area
1.99 m²
NOCT
49.3 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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