LG Electronics Inc. LG430QAK-A6
Mono-c-Si
430.346
W Pmax
48.2
V Voc
10.85
A Isc
41.3
V Vmp
10.42
A Imp
21.63
% eff.
0.8229
FF
66
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 430.346 | W |
| PTC Power | PTC | 400.8 | W |
| Open-circuit voltage | V_oc_ref | 48.2 | V |
| Short-circuit current | I_sc_ref | 10.85 | A |
| Max-power voltage | V_mp_ref | 41.3 | V |
| Max-power current | I_mp_ref | 10.42 | A |
| Fill factor | FF | 0.8229 | — |
| Efficiency (STC) | η | 21.63 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.003472 | A/°C |
| Voc temperature coefficient | beta_oc | -0.115198 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.297 | %/°C |
| NOCT | T_NOCT | 49.3 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.67176 | V |
| Light-generated current (ref) | I_L_ref | 10.9626 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.14577 | Ω |
| Shunt resistance (ref) | R_sh_ref | 393.098 | Ω |
| Cells in series | N_s | 66 | — |
| CEC Adjust factor | Adjust | 3.1196 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
66
Module area
1.99 m²
NOCT
49.3 °C
CEC listing date
11/16/2022
Annual degradation
0.33%/yr
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