Risen Energy Co. Ltd. SYP200P
Multi-c-Si
199.628
W Pmax
36.5
V Voc
7.65
A Isc
28.6
V Vmp
6.98
A Imp
12.27
% eff.
0.7149
FF
60
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 199.628 | W |
| PTC Power | PTC | 175.0 | W |
| Open-circuit voltage | V_oc_ref | 36.5 | V |
| Short-circuit current | I_sc_ref | 7.65 | A |
| Max-power voltage | V_mp_ref | 28.6 | V |
| Max-power current | I_mp_ref | 6.98 | A |
| Fill factor | FF | 0.7149 | — |
| Efficiency (STC) | η | 12.27 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.00459 | A/°C |
| Voc temperature coefficient | beta_oc | -0.14162 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.518 | %/°C |
| NOCT | T_NOCT | 47.0 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.64484 | V |
| Light-generated current (ref) | I_L_ref | 7.67909 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.4671 | Ω |
| Shunt resistance (ref) | R_sh_ref | 122.823 | Ω |
| Cells in series | N_s | 60 | — |
| CEC Adjust factor | Adjust | 7.9269 | % |
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Module Specifications
Technology
Multi-c-Si
Bifacial
No
BIPV
No
Cells in series
60
Module area
1.627 m²
Dimensions
1.64 × 0.992 m
NOCT
47.0 °C
CEC listing date
11/16/2022
Annual degradation
0.55%/yr
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