Shanghai Aerospace Automobile Electromechanical Co. Ltd. HT72-166M-430 [Clr]

Mono-c-Si Bifacial

430.515 W Pmax

49.4 V Voc

11.46 A Isc

40.5 V Vmp

10.63 A Imp

19.84 % eff.

0.7605 FF

144 cells

IV & PV Curves at STC (1000 W/m², 25 °C)

IV Curves — Multiple Conditions

Irradiance sweep at 25 °C

Temperature sweep at 1000 W/m²

Single-Diode Model Parameters

Source: California Energy Commission module list · retrieved via SAM library · energy.ca.gov

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	430.515	W
PTC Power	PTC	401.4	W
Open-circuit voltage	V_oc_ref	49.4	V
Short-circuit current	I_sc_ref	11.46	A
Max-power voltage	V_mp_ref	40.5	V
Max-power current	I_mp_ref	10.63	A
Fill factor	FF	0.7605	—
Efficiency (STC)	η	19.84	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.004584	A/°C
Voc temperature coefficient	beta_oc	-0.127452	V/°C
Pmax temperature coefficient	gamma_r	-0.356	%/°C
NOCT	T_NOCT	44.3	°C
Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.87349	V
Light-generated current (ref)	I_L_ref	11.8654	A
Saturation current (ref)	I_o_ref	—	A
Series resistance	R_s	0.2923	Ω
Shunt resistance (ref)	R_sh_ref	59.384	Ω
Cells in series	N_s	144	—
CEC Adjust factor	Adjust	16.2485	%

Actions

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Module Specifications

Technology Mono-c-Si

Bifacial Yes

BIPV No

Cells in series 144

Module area 2.17 m²

NOCT 44.3 °C

CEC listing date 11/16/2022

Measured Data

No measured data yet for this module.