Silfab Solar Inc. SIL-415BG
Mono-c-Si
415.172
W Pmax
46.1
V Voc
11.35
A Isc
38.3
V Vmp
10.84
A Imp
22.32
% eff.
0.7935
FF
66
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 415.172 | W |
| PTC Power | PTC | 388.0 | W |
| Open-circuit voltage | V_oc_ref | 46.1 | V |
| Short-circuit current | I_sc_ref | 11.35 | A |
| Max-power voltage | V_mp_ref | 38.3 | V |
| Max-power current | I_mp_ref | 10.84 | A |
| Fill factor | FF | 0.7935 | — |
| Efficiency (STC) | η | 22.32 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.004994 | A/°C |
| Voc temperature coefficient | beta_oc | -0.120782 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.345 | %/°C |
| NOCT | T_NOCT | 45.4 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.70319 | V |
| Light-generated current (ref) | I_L_ref | 11.4714 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.23259 | Ω |
| Shunt resistance (ref) | R_sh_ref | 339.154 | Ω |
| Cells in series | N_s | 66 | — |
| CEC Adjust factor | Adjust | 8.4077 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
66
Module area
1.86 m²
NOCT
45.4 °C
CEC listing date
11/16/2022
Annual degradation
0.5%/yr
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