Silfab Solar Inc. SIL380NT-W
Mono-c-Si
380.646
W Pmax
48.4
V Voc
9.98
A Isc
39.9
V Vmp
9.54
A Imp
20.03
% eff.
0.788
FF
72
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 380.646 | W |
| PTC Power | PTC | 349.7 | W |
| Open-circuit voltage | V_oc_ref | 48.4 | V |
| Short-circuit current | I_sc_ref | 9.98 | A |
| Max-power voltage | V_mp_ref | 39.9 | V |
| Max-power current | I_mp_ref | 9.54 | A |
| Fill factor | FF | 0.788 | — |
| Efficiency (STC) | η | 20.03 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.005289 | A/°C |
| Voc temperature coefficient | beta_oc | -0.136004 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.368 | %/°C |
| NOCT | T_NOCT | 47.5 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.84994 | V |
| Light-generated current (ref) | I_L_ref | 10.0848 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.29936 | Ω |
| Shunt resistance (ref) | R_sh_ref | 597.768 | Ω |
| Cells in series | N_s | 72 | — |
| CEC Adjust factor | Adjust | 8.5957 | % |
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Module Specifications
Technology
Mono-c-Si
Bifacial
No
BIPV
No
Cells in series
72
Module area
1.9 m²
NOCT
47.5 °C
CEC listing date
11/16/2022
Annual degradation
0.5%/yr
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