TSEC TS48-6P3-180A
Multi-c-Si
178.972
W Pmax
29.72
V Voc
7.97
A Isc
23.58
V Vmp
7.59
A Imp
13.35
% eff.
0.7556
FF
48
cells
python manage.py precompute_iv_curves to generate them.
CEC Single-Diode Model Parameters
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Nameplate (STC) | |||
| STC Power | STC | 178.972 | W |
| PTC Power | PTC | 160.0 | W |
| Open-circuit voltage | V_oc_ref | 29.72 | V |
| Short-circuit current | I_sc_ref | 7.97 | A |
| Max-power voltage | V_mp_ref | 23.58 | V |
| Max-power current | I_mp_ref | 7.59 | A |
| Fill factor | FF | 0.7556 | — |
| Efficiency (STC) | η | 13.35 | % |
| Temperature Coefficients | |||
| Isc temperature coefficient | alpha_sc | 0.009803 | A/°C |
| Voc temperature coefficient | beta_oc | -0.087971 | V/°C |
| Pmax temperature coefficient | gamma_r | -0.429 | %/°C |
| NOCT | T_NOCT | 49.1 | °C |
| CEC Single-Diode (De Soto) Parameters | |||
| Modified ideality factor | a_ref | 1.25195 | V |
| Light-generated current (ref) | I_L_ref | 8.05069 | A |
| Saturation current (ref) | I_o_ref | — | A |
| Series resistance | R_s | 0.33381 | Ω |
| Shunt resistance (ref) | R_sh_ref | 2701.77 | Ω |
| Cells in series | N_s | 48 | — |
| CEC Adjust factor | Adjust | 24.5891 | % |
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Module Specifications
Technology
Multi-c-Si
Bifacial
No
BIPV
No
Cells in series
48
Module area
1.341 m²
Dimensions
1.341 × 1.0 m
NOCT
49.1 °C
CEC listing date
11/16/2022
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