Zhejiang Sunpro Power Technology Co Ltd SP510-132M10T

Mono-c-Si

510 W Pmax

45.87 V Voc

14.02 A Isc

38.71 V Vmp

13.18 A Imp

22.09 % eff.

0.7933 FF

66 cells

IV & PV Curves at STC (1000 W/m², 25 °C)

IV Curves at Multiple Conditions

Irradiance sweep at 25 °C

Temperature sweep at 1000 W/m²

Single-Diode Model Parameters

Source: California Energy Commission module list · retrieved via SAM library · energy.ca.gov · All data sources

Parameter	Symbol	Value	Unit
Nameplate (STC)
STC Power	STC	510.198	W
PTC Power	PTC	479.5	W
Open-circuit voltage	V_oc_ref	45.87	V
Short-circuit current	I_sc_ref	14.02	A
Max-power voltage	V_mp_ref	38.71	V
Max-power current	I_mp_ref	13.18	A
Fill factor	FF	0.7933	—
Efficiency (STC)	η	22.09	%
Temperature Coefficients
Isc temperature coefficient	alpha_sc	0.007431	A/°C
Voc temperature coefficient	beta_oc	-0.128895	V/°C
Pmax temperature coefficient	gamma_r	-0.341	%/°C
NOCT	T_NOCT	43.9	°C
Single-Diode (De Soto) Parameters
Modified ideality factor	a_ref	1.7235	V
Light-generated current (ref)	I_L_ref	14.03152	A
Saturation current (ref)	I_o_ref	3.8e-11	A
Series resistance	R_s	0.13467	Ω
Shunt resistance (ref)	R_sh_ref	163.896	Ω
Cells in series	N_s	66	—
CEC Adjust factor	Adjust	4.6388	%

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Module Specifications

Technology Mono-c-Si

Bifacial No

BIPV No

Cells in series 66

Module area 2.31 m²

NOCT 43.9 °C

Temp. coefficient of Pmax -0.341 %/°C

Temp. coefficient of Voc -0.281 %/°C

Temp. coefficient of Isc 0.053 %/°C

CEC list On the 23 Jun 2026 list

Parameters from 23 Jun 2026 list

Measured Data

No measured data yet for this module.

Same Test Data

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